Single wavelength semiconductor laser and its manufacture
文献类型：专利
| 作者 | OKURA YUJI |
| 发表日期 | 1991-04-10 |
| 专利号 | JP1991085786A |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Single wavelength semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which oscillates at a single wavelength with high probability without being affected by reduction of width of a guide layer due to side etching by introducing a third layer consisting of a third semiconductor between first layer consisting of a second semiconductor and a fourth semiconductor which is formed in island shape and by etching the fifth layer in island shape. CONSTITUTION:A single wavelength semiconductor laser consists of an activation layer 2 consisting of, for example, an undoped InGaAsP with a smaller band gap and a larger refractive index than a substrate 1 consisting of, for example, a p-type InP, a first clad layer 3, for example, consisting of an n-type InP, a guide layer 4 consisting of, for example, an n-type InGaAsP with a different refractive index from that of the substrate 1 which is formed in island shape, an electrode metal 5, a refractive index fluctuation adjusting layer 6 consisting of, for example, an n-type InGaAsP with a different refractive index from that of the substrate 1, and second and third clad layers 7 and 8 consisting of, for example, an n-type InP, where the n-type InGaAsP guide layer 4 is etched up to the n-type InP second clad layer 7 and the n-type InP third clad layer 8 is formed so that the n-type InGaAsP guide layer 4 is buried. |
| 公开日期 | 1991-04-10 |
| 申请日期 | 1989-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88734]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | OKURA YUJI. Single wavelength semiconductor laser and its manufacture. JP1991085786A. 1991-04-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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