Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | IKETANI AKIRA |
| 发表日期 | 1992-04-21 |
| 专利号 | JP1992120785A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To always uniformly manage the height of a ridge waveguide without depending upon etching condition, the shape of a wafer by previously forming an InGaAsP ultrathin film layer as an etching stop layer in an InP clad layer to become the desired height of the waveguide. CONSTITUTION:A stripe pattern is formed on a p-type InGaAs contact layer 7 by using resist 8. Then, the layer 7 is etched by using mixture solution of tartaric acid and hydrogen peroxide. With the stripe of the layer 7 as a mask the ridge of an InP clad layer 6 is formed by etching. As the etchant of this step, mixture solution of hydrochloric acid and phosphoric acid is used. The etching speed of the InP with the solution is 100 times as fast as that of the InGaAsP. When the etchant having high selectivity is used, the layer 6 of 5Angstrom is etched for 4min of twice as long as etching time to be presumed from its etching rate, a mesa and the surface of an etching stop layer 5 are not roughed, but becomes a flat mirror-surface of atomic layer order. |
| 公开日期 | 1992-04-21 |
| 申请日期 | 1990-09-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88735]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IKETANI AKIRA. Semiconductor laser element and manufacture thereof. JP1992120785A. 1992-04-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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