半導体レーザ素子及びその製造方法
文献类型：专利
| 作者 | 中津 弘志; 猪口 和彦; 厚主 文弘; 奥村 敏之; 滝口 治久 |
| 发表日期 | 1996-08-08 |
| 专利号 | JP2547458B2 |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子及びその製造方法 |
| 英文摘要 | PURPOSE:To enable a semiconductor laser to oscillate in a single, basic, horizontal, and lateral mode by a method wherein a dopant containing SOG film is made to serve as a buried layer, and a diffusion region doped with dopant contained by the buried layer is formed in a region adjacent to the buried layer in a mesa stripe structure. CONSTITUTION:An N-type InP buffer layer 2, an active layer 3, a P-type InP clad layer 4, and a P-type GaInAs cap layer 5 are epitaxially grown in succession on an N-type InP buffer layer 2 through a MOCVD method. A resist provided with a mesa stripe pattern is formed on the cap layer 5, which is mesa- etched in an inverted mesa direction. Then, an SOG solution is applied onto a wafer without removing the resist, and then a baking process takes place to form a buried layer formed of an SOG film 6. Furthermore, a baking process is made to continue to enable Zn contained by the SOG film 6 to diffuse into a mesa strip structure. The upside of the wafer is flattened by the buried layer of the SOG film 6, a P-side electrode 7 is formed, and an N-side electrode 8 is provided to the rear of the substrate |
| 公开日期 | 1996-10-23 |
| 申请日期 | 1990-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88738]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | 中津 弘志,猪口 和彦,厚主 文弘,等. 半導体レーザ素子及びその製造方法. JP2547458B2. 1996-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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