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文献类型：专利
| 作者 | KITAMURA MITSUHIRO; MITO IKUO; KOBAYASHI ISAO |
| 发表日期 | 1987-10-16 |
| 专利号 | JP1987048918B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To enhance the yeild rate of InGaAsPBH-LD characterized by the small leaking current to the part other than an active layer and excellent temperature characteristics, by obtaining a current block layer for improving the temperature characteristics with excellent reproducibility. CONSTITUTION:A semiconductor layer including at least an active layer 303 is laminated on an N type InP substrate 30 On the surface of a wafer having the multilayered film structure described above, a stripe shaped diffused protecting mask 305 is formed. Then, P type impurities are selectively diffused into the deep region. Then a part of or the entire part of said P type impurity region 306 is chemically etched to an active layer 307, and a mesa stripe 308 having the multilayered film structure is formed. Then only the upper surface of the mesa stripe 308 is removed, and the N type current block layer 309 is laminated. Thereafter, a P type embedded layere 310 is continuously laminated on the entire surface. An N-InGaAsP cap layer 311 is further laminated and the epitaxial growing is finished. |
| 公开日期 | 1987-10-16 |
| 申请日期 | 1981-07-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88745]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | KITAMURA MITSUHIRO,MITO IKUO,KOBAYASHI ISAO. -. JP1987048918B2. 1987-10-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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