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文献类型：专利
| 作者 | YUASA TSUNAO |
| 发表日期 | 1985-08-02 |
| 专利号 | JP1985033320B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To prevent the deterioration of a reflection face by coating the reflection face of a laser with a high-resistance Si film and coating the Si film with an Al2O3 film in the GaAs-AlGaAs semiconductor laser. CONSTITUTION:In production of a GaAs-AlGaAs semiconductor laser, semiconductor laser crystal having semiconductor region 6 of stripe-type GaAs-AlGaAs is cleaved to form plate-shaped crystal 1, and Si film 3 is sticked to cleavage face 2 of plate-shaped crystal 1 by electron beam evaporation or electric phase growning method. Next, Al 4 is caused to adhere onto Si film 3 by evaporation or sputter method, and plate-shaped crystal 1 which has cleavage face 2 coated with Si film 3 and Al 4 is inserted into the Os plasma which is generated by high frequency discharge in a prescribed O2 atmosphere, and Al 4 is plasma-oxidized. Then, Al2O3 film 4' is formed into a prescribed thickness, and semiconductor laser 5 which has the Si-Al2O3 film sticked to the reflection face is cut off. |
| 公开日期 | 1985-08-02 |
| 申请日期 | 1978-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88753]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | YUASA TSUNAO. -. JP1985033320B2. 1985-08-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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