半導体レーザ素子
文献类型：专利
| 作者 | 坂根 千登勢; 瀧口 治久; 工藤 裕章; 菅原 聰 |
| 发表日期 | 1998-07-24 |
| 专利号 | JP2806533B2 |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子 |
| 英文摘要 | PURPOSE:To prevent a diffraction grating from being corroded by a meltback operation and to surely obtain a single longitudinal mode by a method wherein a semiconductor compound is grown at high speed on the diffraction grating by using a solution in an oversaturated state. CONSTITUTION:A mixed crystal ratio of an In1-xGaxAsyP1-y diffraction grating formation layer 15 satisfies 0.68<=x<=1, 0.34<=y<=1 and y=2.04x-04; a mixed crystal ratio of an n-type AlzGa1-zAs channel formation layer 16 laminated on each side part on the layer 15 is set within a range of 0<=z<=0.5. Accordingly, when a stripe-shaped channel is formed down to the layer 15 in the central part of the layer 16, an oxide film is formed on the surface of the layer 16; when a clad layer 17 is grown by a liquid epitaxial method, a growth speed of a crystal which is grown on the layer 16 becomes slow when its growth is started. As a result, a solution of a crystal which is grown on the layer 15 easily becomes an oversaturated state; a growth speed of the crystal becomes fast. Thereby, diffraction gratings 15a, 16a on the layer 15 are not corroded by a meltback operation; a single longitudinal-mode oscillation can be obtained surely. |
| 公开日期 | 1998-09-30 |
| 申请日期 | 1988-10-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88754]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | 坂根 千登勢,瀧口 治久,工藤 裕章,等. 半導体レーザ素子. JP2806533B2. 1998-07-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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