Light-emitting element and manufacture thereof
文献类型：专利
| 作者 | UEJIMA KENICHI |
| 发表日期 | 1985-01-31 |
| 专利号 | JP1985018984A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Light-emitting element and manufacture thereof |
| 英文摘要 | PURPOSE:To form a higher-output semiconductor laser element with excellent yield by a method wherein a thin-film layer, which transmits light, is formed on the major surfaces of the light-emitting surface. CONSTITUTION:Cleavage lines 22 are cut in the crystal located at one edge of a wafer 12 by applying an external force to the one edge of an fixed interval with a knife, etc., and after that, the wafer 12 is parted at each of intermediate parts between grooves 14, and furthermore, a cracking is performed at the lines 22 for forming semiconductor laser chips 23. Then, epitaxial layers 25 consisting of Zn and Se are formed on a pair of cleavage surfaces 24 of the chip 23 by a molecul beam epitaxial method. As the treating temperature at the growing time of the layers 25 is 300 deg.C and comparatively low, there is no possibility that the layers 25 destruct electrodes already formed. As a result, no lattice mismatching is caused on the interfaces between the element material and the epitaxial layers and the recombination luminescence of carriers doesn't effect at the time of laser oscillation. |
| 公开日期 | 1985-01-31 |
| 申请日期 | 1983-07-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88755]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | UEJIMA KENICHI. Light-emitting element and manufacture thereof. JP1985018984A. 1985-01-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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