Semiconductor laser
文献类型：专利
| 作者 | YAMAMOTO YOSHIHISA; MACHIDA SUSUMU |
| 发表日期 | 1992-01-27 |
| 专利号 | JP1992023380A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enhance an efficiency (a coupling efficiency) to emit as a laser beam to the outside in a remarkably improved manner compared to a conventional efficiency by a method wherein a current for excitation use is fed to a semiconductor luminous layer from the outside to excite the semiconductor luminous layer and natural emitted light having a band centering around the emission central wavelength of a luminous medium constituting the semiconductor luminous layer is obtained. CONSTITUTION:When a current for excitation use is fed to a semiconductor luminous layer 16 in a semiconductor luminous part 1 from the outside via electrode layers 41 and 42 and through semiconductor distributed light reflectors 2A and 2B, the layer 16 is excited and natural emitted light having a band centering around the emission central wavelength of a luminous medium constituting the layer 16 is obtained. The natural emitted light is propagated in a basic mode and a highorder mode of an optical waveguide 50 in a reference direction in the waveguide 50, which is constituted of an optical resonator 10 and a layer 20 for clad use. As a result, the natural emitted light, which is obtained in the layer 16, can be made to emit to the outside on the side of the reflector 2B through windows 43 in the layer 42. |
| 公开日期 | 1992-01-27 |
| 申请日期 | 1990-05-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88758]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | YAMAMOTO YOSHIHISA,MACHIDA SUSUMU. Semiconductor laser. JP1992023380A. 1992-01-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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