Manufacture of semiconductor light-emitting device
文献类型：专利
| 作者 | FURUYA AKIRA; SANADA TATSUYUKI |
| 发表日期 | 1988-06-27 |
| 专利号 | JP1988153878A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To prevent a stripe, defined dependent on a Zn-or Si-diffused region, from becoming wider as it grows deeper by a method wherein Zn or Si is introduced from one direction into an active layer, built of a multiple quantum well (MQW) consisting of a GaAs film and an AlGaAs film, and into two clad layers sandwiching the active layer, to selectively disordering the active layer. CONSTITUTION:On an n-type GaAs substrate 1, an n-type AlGaAs clad layer 2, an MQW active layer 3 built of a GaAs film and an AlGaAs film, a p-type AlGaAs clad layer 4, and a p-type GaAs electrode contact layer 5, are grown. It is so arranged in an Si-diffused region 9 that a value (x) in the clad layers 2 and 4 may be gradually higher toward the active layer 3. An SiO2 film 8 is removed, an Si film 7 is removed, mesa-etching is done for the electrode contact layer 5, and then a part of the Si-diffused region 9 is removed. After the removal of a photoresist film and others, an SiO2 film 10 is subjected to patterning for the formation of a stripe-geometry window positioned to face the electrode contact layer 5. An evaporation-formed Au/Zn/Au film is removed in a patterning process after which a stripe-geometry portion is retained. |
| 公开日期 | 1988-06-27 |
| 申请日期 | 1986-12-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88761]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | FURUYA AKIRA,SANADA TATSUYUKI. Manufacture of semiconductor light-emitting device. JP1988153878A. 1988-06-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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