Semiconductor laser for emitting light beams at multiple points
文献类型：专利
| 作者 | HATTORI AKIRA |
| 发表日期 | 1989-10-18 |
| 专利号 | JP1989260878A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser for emitting light beams at multiple points |
| 英文摘要 | PURPOSE:To decrease electric interference among light emitting points, by forming a multiple point light emitting laser diode by growing a crystal on an insulating substrate, and forming an isolating groove which isolates the light emitting points so as to reach the insulating substrate. CONSTITUTION:On an insulating substrate 8, e.g., on a Cr doped GaAs substrate, p-type GaAS contact layers 7a and 7b and n-type GaAs current blocking layers 6a and 6b are grown in a liquid phase or a vapor phase. Current injecting grooves 10a and 10b are formed by etching. Then, p-type AlyGa1-yAs second clad layers 5a and 5b, p-type AlxGa1-xAs active layers 4a and 4b, n-type AlyGa1-yAs first clad layers 3a and 3b and n-type GaAs contact layers 2a and 2b are sequentially grown as crystals. Furthermore, an isolating groove 9 is formed by etching so as to reach the insulating substrate 8. Thus, light emitting points 1a and 1b are completely isolated electrically. Electrode parts 11a and 11b are formed so as to form electrodes by etching so that parts of the electrode parts are exposed on the surfaces of the p-type GaAs contact layers 7a and 7b. |
| 公开日期 | 1989-10-18 |
| 申请日期 | 1988-04-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88762]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HATTORI AKIRA. Semiconductor laser for emitting light beams at multiple points. JP1989260878A. 1989-10-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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