Semiconductor laser device
文献类型：专利
| 作者 | YOSHIZAWA MISUZU; KAJIMURA TAKASHI; NAKAJIMA KEIICHI; KONO TOSHIHIRO |
| 发表日期 | 1990-08-08 |
| 专利号 | JP1990199888A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent a driving current from increasing and to extend a life by reducing in thickness an active layer in a civil high output semiconductor laser device, forming a clad layer in a 2-layer structure, and increasing the band gap of a clad layer farther from the active layer larger than that of a clad layer nearer therefrom. CONSTITUTION:An N-type Al0.37Ga0.63As clad layer 2, an N-type Al0.06Ga0.94As active layer 3, a P-type Al0.37Ga0.63As first clad layer 4 and an N-type GaAs current narrowing layer 6 are sequentially formed on an N-type GaAs substrate crystal 1 by a MOCVD method. In this case, the thickness of the active layer 3 is 35-45nm. The center of the current narrowing layer 6 is removed in a stripe state in a hot etching step, and the surface of the clad layer 4 is exposed. Thus, a groove stripe is formed. Then, a P-type second clad layer 7 and a P-type GaAs cap layer 8 are formed by a MOCVD method. Thereafter, after a P-type side electrode 9 and an N-type side electrode 10 are formed, a laser element is obtained by a cleaving method. Thus, an element which can operate for a long period can be obtained. |
| 公开日期 | 1990-08-08 |
| 申请日期 | 1989-01-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88764]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | YOSHIZAWA MISUZU,KAJIMURA TAKASHI,NAKAJIMA KEIICHI,et al. Semiconductor laser device. JP1990199888A. 1990-08-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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