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文献类型：专利
| 作者 | SUEMATSU YASUHARU; SUZAKI SHINZO |
| 发表日期 | 1993-04-27 |
| 专利号 | JP1993028916B2 |
| 著作权人 | SHINGIJUTSU JIGYODAN |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To lessen the number of growth processes and to upgrade a working efficiency by a method wherein the growth of an external layer and the growth of a current constricting layer are continuously performed in order and thereafter, the prescribed part only of the current constricting layer is removed. CONSTITUTION:An InGaAsP active waveguide layer 3 and an N-type InP protective layer 4 are epitaxially grown in order on a P-type InP buffer layer 2. Then, with the active waveguide layer 3 and the protective layer 4 removed by a photolithography method and selectively etching excluding their central parts, a distributed Bragg-reflector 10 is formed. An N-type InGaAsP external waveguide layer 5 is grown on the upper surfaces of the distributed Bragg- reflector 10 and the protective layer 4 and moreoover, a P-type InP current constricting layer 20 is grown on the whole upper surface of the external waveguide layer 5. Out of the current constricting layer 20, the region part corresponding to the upper direction of the active waveguide layer 3 is removed by a photolithography method and thereafter, an N-type InP clad layer 6 is grown and an insulating film 7 and a metallic electrode 8 are formed. |
| 公开日期 | 1993-04-27 |
| 申请日期 | 1986-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88766]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHINGIJUTSU JIGYODAN |
| 推荐引用方式 GB/T 7714 | SUEMATSU YASUHARU,SUZAKI SHINZO. -. JP1993028916B2. 1993-04-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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