Semiconductor laser device and method for fabricating the same
文献类型：专利
| 作者 | ITOH, SHIGETOSHI; OKUMURA, TOSHIYUKI |
| 发表日期 | 1997-07-02 |
| 专利号 | EP0701310B1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device and method for fabricating the same |
| 英文摘要 | A semiconductor laser device includes: a lower cladding layer (13); an upper cladding layer having a bottom and a strip-shaped ridge portion projecting from the bottom (15); a II-VI compound semiconductor active layer (14) interposed between the lower cladding layer and the upper cladding layer; and a burying blocking layer (18) made of an aromatic polyamide resin formed on a bottom of the upper cladding layer so as to be in contact with sides of the stripe-shaped ridge portion. |
| 公开日期 | 1997-07-02 |
| 申请日期 | 1995-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88769]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | ITOH, SHIGETOSHI,OKUMURA, TOSHIYUKI. Semiconductor laser device and method for fabricating the same. EP0701310B1. 1997-07-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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