Semiconductor laser element and its manufacture
文献类型：专利
| 作者 | TANAKA TOSHIAKI; MINAGAWA SHIGEKAZU; KAJIMURA TAKASHI |
| 发表日期 | 1992-03-17 |
| 专利号 | JP1992084482A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and its manufacture |
| 英文摘要 | PURPOSE:To get high output properties by relatively decreasing the carrier concentration at the vicinity on the side where a second waveguide layer contacts with an active layer and relatively increasing the carrier concentration at the vicinity on the reverse side. CONSTITUTION:On a substrate 1 are stacked a buffer layer 2, a light waveguide layer 3, an active layer 4, a light waveguide layer 5, an etch stop layer 6, a waveguide layer 7, and a cap layer 8. For the light waveguide layer 5, the p-type impurities concentration is set so that the carrier concentration may be 1-10cm usually, and for the light waveguide layer 7, p-type impurity concentration is increased relatively and is set so that the carrier concentration may be high at 5X10-10cm. The impurities diffuse from the light waveguide layer 7 to the active layer 4, and by the concentration of these diffused impurities, ordered array structure occurring in the undoped layer 4 vanishes. Therefore, in this part, the band gap of the active layer comes to show the value in the case of disordered array structure. Moreover, by using quantum well structure for the active layer, the band gap difference with the inside becomes large. |
| 公开日期 | 1992-03-17 |
| 申请日期 | 1990-07-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88777]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIAKI,MINAGAWA SHIGEKAZU,KAJIMURA TAKASHI. Semiconductor laser element and its manufacture. JP1992084482A. 1992-03-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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