Semiconductor laser device
文献类型：专利
| 作者 | YOSHIHIRO, KOKUBO; SEIJI, MINAMIHARA; KOUJI, YAMASHITA; KATSUHIKO, GOTOH |
| 发表日期 | 1994-12-07 |
| 专利号 | GB2278726A |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser (100) includes a semiconductor substrate (1) of a first conductivity type, a gain guiding structure comprising a first conductivity type lower cladding layer (2) disposed on the substrate, an active layer (3) disposed on the lower cladding layer and having a light emitting region (13), and an upper cladding layer (5) of a second conductivity type, opposite the first conductivity type, disposed on the active layer, and a multiquantum barrier layer (4) interposed between the upper cladding layer and the active layer excluding the light emitting region. In this structure, since the multiquantum barrier layer reduces leakage current flowing outside of the light emitting region of the active layer and increases effective current flowing into the light emitting region, whereby the light output of the laser is significantly increased.; The multiquantum barrier layer may also be interposed between current blocking layers, the substrate and current blocking layers, or current blocking layers and a ridge shaped DHB structure. |
| 公开日期 | 1994-12-07 |
| 申请日期 | 1994-05-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88778]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | YOSHIHIRO, KOKUBO,SEIJI, MINAMIHARA,KOUJI, YAMASHITA,et al. Semiconductor laser device. GB2278726A. 1994-12-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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