Semiconductor laser
文献类型：专利
| 作者 | SHIMIZU HIROKAZU; WADA MASARU; SUGINO TAKASHI; ITOH KUNIO |
| 发表日期 | 1984-04-17 |
| 专利号 | CA1165848A |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 加拿大 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | Abstract of the Disclosure In a laser comprising a GaAs substrate, an active layer of GaAlAs put between a first and a second clad layers, a buffer layer is disposed between said first clad layer and said substrate, and thermal expansion coefficient of the buffer layer is selected smaller than that of said active layer; thereby an internal stress of the active layer is released and lifetime of the laser is very much prolonged. |
| 公开日期 | 1984-04-17 |
| 申请日期 | 1980-09-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88783]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | SHIMIZU HIROKAZU,WADA MASARU,SUGINO TAKASHI,et al. Semiconductor laser. CA1165848A. 1984-04-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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