Semiconductor laser
文献类型：专利
| 作者 | KOBAYASHI ATSUYUKI; HASE NOBUYASU |
| 发表日期 | 1987-01-08 |
| 专利号 | JP1987002583A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a double hetero-structured semiconductor laser which is easy to produce and capable of high-power operation, by sandwiching both sides of the upper and lower clads by a single current constricting layer, and forming N types and P types by first and second epitaxies in the portions where the upper clad and the current constricting layer are contacted with each other. CONSTITUTION:On a substrate 2, layers are continuously grown by first epitaxy, part of which consists of a lower clad 3, an active region 4, an upper clad 5 and a cap 6, respectively, and the portion except for the lower clad 3, active region 4 and upper clad 5 is removed using photolithography. Both sides of the upper clad formed in this process are in N-type. Then, a P-type current constricting layer 12 is grown by second epitaxy so as to fill the removed portion. Thereafter, leaving the most of the surface of the cap 6, an insulating film 10, an upper electrode 11, and, in the back surface, a lower electrode 1 are formed by evaporation, and this is squarely cleaved. With this, the reactive current elusively flowing through the P-N junction is reduced, and a high-power semiconductor laser can be obtained. |
| 公开日期 | 1987-01-08 |
| 申请日期 | 1985-06-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88796]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KOBAYASHI ATSUYUKI,HASE NOBUYASU. Semiconductor laser. JP1987002583A. 1987-01-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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