半導体レ-ザ装置の製造方法
文献类型：专利
| 作者 | 長谷川 光利; 原 利民; 野尻 英章; 関口 芳信; 宮沢 誠一 |
| 发表日期 | 1994-12-12 |
| 专利号 | JP1994101609B2 |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置の製造方法 |
| 英文摘要 | PURPOSE:To form resonance faces of adjacent devices through a single cleaving by providing a part involving stripe patterns of adjacent devices that are situated in a given direction and cleaving the concerned portion. CONSTITUTION:After making five layers; N-type GaAs layer 6, n type AlGaAs layer 7, non-doping GaAs layer 8, P-type Al GaAs layer 9, P-type GaAs layer 10 grow in sequence on a N-type GaAs substrate 5, a nitriding silicon plasma CVD film is extensively coated. Then, areas applied by an electric current are removed by etching so that laser stripes of 1 and 1' are superimposed and are covered with a laminated electrode 20 of Cr and Au. The electrode 20 separates each laser so that its laser can be driven independently. While, after forming the laminated electrode 21 of AuGe and Au at the rear side of the above substrate, ohmic contact is formed by thermal diffusion. In addition, a portion 2 where lasers are superimposed one upon another like lines of a-A and a'-A' is cleaved in the middle of the portion 2 unit by unit to form faces of a resonator and each electrode is taken out by wire bonding. |
| 公开日期 | 1994-12-12 |
| 申请日期 | 1986-05-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88804]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | 長谷川 光利,原 利民,野尻 英章,等. 半導体レ-ザ装置の製造方法. JP1994101609B2. 1994-12-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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