Semiconductor laser device
文献类型：专利
| 作者 | OOTOSHI SOU; KOUNO TOSHIHIRO; KAYANE NAOKI; KAJIMURA TAKASHI |
| 发表日期 | 1985-07-06 |
| 专利号 | JP1985126883A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain the increase of an output and high reliability, and to acquire a semiconductor laser device oscillating in a stable fundamental transverse mode even on operation by a high output by grading the refractive index of an optical guide layer and forming an active layer to a quantum well type and shaping the active layer to a SBH type. CONSTITUTION:An optical guide layer 3, a refractive index thereof is smaller than an active layer 4 and forbidden band width thereof is larger than the active layer while the refractive index thereof gradually increases toward the active layer 4 side from the N-clad layer 2 side, is arranged between the N-clad layer 2, a refractive index thereof is smaller than the active layer 4 and forbidded band width thereof is larger than the active layer, and the active layer 4, thickness thereof is thin and a refractive index thereof is larger than the N-clad layer 2 and forbidden band width thereof is smaller than the N-clad layer, and a clad layer 5 having a small refractive index and large forbidden band width is formed on the upper side of the active layer 4. |
| 公开日期 | 1985-07-06 |
| 申请日期 | 1983-12-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88809]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | OOTOSHI SOU,KOUNO TOSHIHIRO,KAYANE NAOKI,et al. Semiconductor laser device. JP1985126883A. 1985-07-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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