Distributed feedback type semiconductor laser
文献类型：专利
| 作者 | SUZAKI SHINZOU |
| 发表日期 | 1984-07-23 |
| 专利号 | JP1984127895A |
| 著作权人 | FUJIKURA DENSEN KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To simplify a manufacturing process, to inhibit a Fabry-Perot mode approximately completely and to obtain a mode of stable oscillation by forming a semiconductor laser element on a mesa type semiconductor substrate to which a pojecting stripe (mesa stripe) with a top surface shorter than the substrate is integrally formed previously. CONSTITUTION:With a mesa type semiconductor substrate (a), it is etched from the upper surface side, and a striped mesa section (a projecting stripe) 1b is formed to the upper surface of a base section 1a. With the mesa section 1b, one end surface 7 is conformed to one end surface 8 (a cleavage plane) of the base section 1a, and a top surface 1c as a recombination region, which forms a parallel surface with a semicondutor crystal substrate 1, is formed. That is, substrate length l1 is larger than the length l2 of the top surface 1c. A photo-resist is applied on the whole upper surface of the substrate (a), and a corrugated pattern is formed through an interference exposure method using radiating beams from a He-Cd laser, and a diffraction grating (periodic variation of thickness) 6 is formed through etching. |
| 公开日期 | 1984-07-23 |
| 申请日期 | 1983-01-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88811]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA DENSEN KK |
| 推荐引用方式 GB/T 7714 | SUZAKI SHINZOU. Distributed feedback type semiconductor laser. JP1984127895A. 1984-07-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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