Manufacture of semiconductor laser
文献类型：专利
| 作者 | TASHIRO YOSHIHARU |
| 发表日期 | 1991-11-15 |
| 专利号 | JP1991256388A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To manufacture a semiconductor laser, which is used in fields such as an optical information processing field, an optical communication field and the like, at a high yield and in a simple process by a method wherein a stripe in a reverse mesa shape is formed in one part of a clad layer of a second conductivity type and an insulating film with which mesa side faces are not covered and with which an impurity diffusion part is covered is formed. CONSTITUTION:A strip-shaped mask 8 composed of a photoresist is formed; a stripe 9 in a reverse mesa shape is formed by using it as a mask. An Si film 10 on the mesa stripe 9 is removed; Si is diffused by heat treatment; an Si diffusion region 11 is formed. An insulating film 12 is formed on the whole surface of a wafer. The Si diffusion region 11 is formed in such a way that it is separated from the stripe 9 by an amount corresponding to the side-ecthed portion of the mesa stripe because of the mask 8 on the mesa stripe 9. since the mask 8 on the mesa stripe 9 is removed, the insulating film 12 is formed up to position close to the mesa stripe 9 by the Si film 10. A p-type electrode 13 and an n-type electrode 14 are formed. |
| 公开日期 | 1991-11-15 |
| 申请日期 | 1990-03-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88820]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | TASHIRO YOSHIHARU. Manufacture of semiconductor laser. JP1991256388A. 1991-11-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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