Semiconductor laser
文献类型：专利
| 作者 | HINO ISAO |
| 发表日期 | 1992-04-16 |
| 专利号 | JP1992115587A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To make it possible to obtain a high reliability and high performance semiconductor laser by emitting protons or specific charged particles until they reach or penetrate an active layer from the surface of multilayer structure only near the end face which is a reflected plane of light or an emitting plane. CONSTITUTION:A clad layer 2, an active layer 3, a clad layer 3, and a cap layer 9 are arranged to grow successively on a n type GaAs substrate 1 based on a MOVEP process. Protons or charged particles with a mass number of 10 or below are emitted up to a depth where they penetrate the active layer 3 only near end face 8, thereby forming a proton emitting region 5. This makes it possible to inhibit the generation of optical absorption near the end face (window section) and prevent optical damage or end face deterioration. Moreover, since the window section allows the active layer 3 and each layer on the upper part of the active layer to serve as a high resistor, electric current is concentrated in a region which yields a laser gain efficiently even if no attempt is made to provide a special current limitation mechanism. This construction makes it possible to obtain a high reliability and high output semiconductor laser easily. |
| 公开日期 | 1992-04-16 |
| 申请日期 | 1990-09-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88824]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | HINO ISAO. Semiconductor laser. JP1992115587A. 1992-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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