半導体レーザの製造方法
文献类型：专利
| 作者 | 貝瀬 喜久夫; 本堀 勲; 平林 崇之 |
| 发表日期 | 2000-06-23 |
| 专利号 | JP3080312B2 |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザの製造方法 |
| 英文摘要 | PURPOSE:To accurately set a light emitting edge to a prescribed refractive index excellent in reproducibility by a method wherein the light emitting edge is coated with a refractive index controlling film compose of a first and a second light transmitting insulating films which are laminated together and different from each other, and the light transmitting insulating films are specified in thickness basing on the wavelength of light and their refractive indexes. CONSTITUTION:At least, a light emitting edge 1a out of the light emitting edge 1a and the opposed light emitting face 1b of a semiconductor laser 1 is coated with a refractive index controlling film 2 composed of a first and a second light transmitting insulating film, 11 and 12, which are laminated together and different from each other. The thicknesses t1 and t2 of the first and the second light transmitting films 11 and 12, are selected so as to satisfy formulas, t1=(2m+1)/2n1 or (2m+1)/4n1 and t2=(2m+1)/4n2, respectively where lambda, m, n1, and n2 denote the light wavelength of a semiconductor laser, an integer, and the refractive indexes of the first and the second light transmitting insulating films 11 and 12. By this selection, the light emitting edge of a semiconductor laser can be set to a prescribed refractive index excellent in reproducibility. |
| 公开日期 | 2000-08-28 |
| 申请日期 | 1989-10-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88825]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | 貝瀬 喜久夫,本堀 勲,平林 崇之. 半導体レーザの製造方法. JP3080312B2. 2000-06-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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