Semiconductor light-emitting element and its manufacture
文献类型：专利
| 作者 | KASAHARA KENICHI; YANASE TOMOO |
| 发表日期 | 1988-09-22 |
| 专利号 | JP1988228694A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element and its manufacture |
| 英文摘要 | PURPOSE:To make a crystal laminated body having a structure of enabling high-speed modulation, generating oscillation and luminescence with high-efficiency and high- productivity by laminating a first conductive type and second epitaxial growth layer, a third epitaxial growth layer which is an active layer for luminescence, a second conductive type fourth epitaxial growth layer by turns on a groove in the depth passing through an interface under the first epitaxial growth layer. CONSTITUTION:A first epitaxial growth layer consisting of a high-resistance current constriction layer 12 and an n-type electrode constriction layer is formed on an n-type semiconductor substrate 1 Next, a silicon oxide mask 21 having a strip-shaped window is formed on the surface of the n-type electrode constriction layer 12 of the first epitaxial growth layer while forming a V-shaped groove 22 with bromomethanol. Further, a crystal lamination body consisting of an n-type clad layer 13 which is a second epitaxial growth layer, an active layer 14 which is a third epitaxial growth layer, a p-type clad layer 15 which is a fourth epitaxial growth layer and a contact layer 16 which is a fifth epitaxial growth layer is made to epitaxial-grow selectively on an etching groove 22 having the V-shaped base. |
| 公开日期 | 1988-09-22 |
| 申请日期 | 1987-03-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88826]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | KASAHARA KENICHI,YANASE TOMOO. Semiconductor light-emitting element and its manufacture. JP1988228694A. 1988-09-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。