Manufacture of semiconductor light-emitting element
文献类型：专利
| 作者 | KUSUKI TOSHIHIRO; OKAZAKI JIRO |
| 发表日期 | 1986-07-30 |
| 专利号 | JP1986168986A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To prevent electric current control function at a P-N reverse bonding unit from damaging by a method wherein a P-layer is provided between a P-layer and an (N) layer at the stage of forming a buried layer of BH type (buried hetero type) semiconductor laser. CONSTITUTION:A non-doped InGaAsP active layer 2 and P-InP layer are 3 laminated on an N-InP substrate 1 and a stripe unit DH (double hetero) constitution is formed performing mesa-etching. A P-InP 4, an N-InP 5, a P-InP 7 and a P-InP 6 are subjected to grow by means of liquid-phase epitaxial growth method. Diffusion of dopant Zn is absorbed by the third layer P-InP 7 at the time of the fourth layer growth by means of laminating the third layer P-InP 7 on the secondary N-InP 5, and diffusion to the secondary N-InP 5 is prevented, then an electric control layer which is N-P reverse-bonding is not damaged. |
| 公开日期 | 1986-07-30 |
| 申请日期 | 1985-01-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88831]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KUSUKI TOSHIHIRO,OKAZAKI JIRO. Manufacture of semiconductor light-emitting element. JP1986168986A. 1986-07-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。