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文献类型：专利
| 作者 | ASATA SUSUMU |
| 发表日期 | 1993-02-16 |
| 专利号 | JP1993011673B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To improve the efficiency of a laser device by forming a striped current conduction region at the central section of the device and shaping current constriction regions in both side regions along a stripe. CONSTITUTION:A first clad layer 11 is grown onto a substrate 10, and an active layer 12 and a second clad layer 13 are grown. The focussed ion beams 23 of gallium ions, etc., are driven into borderlines between a striped region 21 and a external regions 22 of the region 21, and parallel trenches 24 symmetric to the center line of an element are cut. Focussed ion beams 23 are moved to positions where trench ends at outermost ends to the center line of the device are irradiated, novel trenches 31 are continued to be cut in parallel with the trenches by focussed ion beams 23 while the re-adhesion layers 32 of a sputtering substance are formed, the trenches 24 are fill, and lastly high resistance layer regions 42 and fine width trenches 43 are shaped on both side surfaces along the stripe of a striped region 41 in the active layer 12, and electrodes 44, 45 are formed. Leakage currents from an active layer region are reduced in the semiconductor laser device shaped, thus allowing laser oscillation having high efficiency. |
| 公开日期 | 1993-02-16 |
| 申请日期 | 1986-11-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88832]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | ASATA SUSUMU. -. JP1993011673B2. 1993-02-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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