Semiconductor light-emitting device
文献类型：专利
| 作者 | YOKOZUKA TATSUO; TAKAMORI AKIRA |
| 发表日期 | 1991-11-26 |
| 专利号 | JP1991265184A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To prevent decrease in laser characteristics caused by oxidation of an active layer and prevent lifetime from shortening by forming clad layers, which have lattice-matched structures with a substrate and the band gaps of which are at least 0.25eV larger than that of the active layer. CONSTITUTION:In a structure consisting of an n-type electrode 18, a GaAs substrate 17, an n-AlGaInP clad layer 16, an undoped GayIn1-yP active layer 15, a p-AlGaInP clad layer 14, etc., the layers 14 and 16 are lattice-matched with the substrate 17 and the layer 15 is made of a distorted lattice structure. The layer 15 is lattice-matched with the substrate 17 composed of (AlxGa1-x)0.5 In0.5P (0<=x<=1) and the band gaps of the layers 14 and 16 are at least 0.25eV larger than that of the layer 15. Thereby a semiconductor light-emitting device having an oscillation wavelength under 0.67mum is obtained with the layer 15 not containing aluminum and the layer 15 is hardly oxidized even at a high operation temperature because the layer 15 does not contain aluminum. Therefore, characteristics do not decrease, lifetime is lengthened, and low power consumption coherent light is obtained. |
| 公开日期 | 1991-11-26 |
| 申请日期 | 1990-03-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88835]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | YOKOZUKA TATSUO,TAKAMORI AKIRA. Semiconductor light-emitting device. JP1991265184A. 1991-11-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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