Distribution reflection type semiconductor laser device
文献类型：专利
| 作者 | ITAYA YOSHIO; NAGAI HARUO; NOGUCHI ETSUO |
| 发表日期 | 1983-08-15 |
| 专利号 | JP1983137284A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distribution reflection type semiconductor laser device |
| 英文摘要 | PURPOSE:To improve the efficiency of laser oscillation by contacting opposite both main surfaces and side end surfaces of an active layer with clad layers respectively. CONSTITUTION:The N type clad layer 2 is laminated onto the main surface of an N type semiconductor substrate The active layer 5, the clad layer 7 and a cap layer 8 are laminated onto the central section 2C of the layer 2. Optical guide layers 13A, 13B are formed to both side sections of the layer 2. The clad layers 15A, 15B are laminated onto the layers 13A, 13B. The clad layers 17A, 17B, 18A, 18B are laminated to both side sections. An electrode 9 is attached onto the substrate 1, and an electrode 10 is attached onto the layer 8. |
| 公开日期 | 1983-08-15 |
| 申请日期 | 1982-02-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88840]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | ITAYA YOSHIO,NAGAI HARUO,NOGUCHI ETSUO. Distribution reflection type semiconductor laser device. JP1983137284A. 1983-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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