Semiconductor laser and method of producing the same
文献类型：专利
| 作者 | KIMURA, TAKASHI; KITAJIMA, HISAYOSHI |
| 发表日期 | 2006-10-03 |
| 专利号 | US7116692 |
| 著作权人 | ROHM CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and method of producing the same |
| 英文摘要 | A semiconductor laser device having a lower cladding layer, an active layer and an upper first cladding layer stacked on a compound semiconductor substrate in this order, a ridge-shaped upper second cladding layer provided on the upper first cladding layer, a current blocking layer provided on both sides of the upper second cladding layer, and a contact layer provided on the upper second cladding layer. A current interrupting layer or layers formed of an insulating material are provided between the upper second cladding layer and the contact layer, in the vicinity of at least one of a laser emission end face and a reflective end face, which are both end faces of the device in the longitudinal direction of the upper second cladding layer. |
| 公开日期 | 2006-10-03 |
| 申请日期 | 2002-12-10 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88842]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ROHM CO., LTD. |
| 推荐引用方式 GB/T 7714 | KIMURA, TAKASHI,KITAJIMA, HISAYOSHI. Semiconductor laser and method of producing the same. US7116692. 2006-10-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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