Semiconductor laser
文献类型：专利
| 作者 | TSURUTA TORU |
| 发表日期 | 1990-01-31 |
| 专利号 | JP1990028986A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a single longitudinal mode laser easily by forming a higher diffraction grating at a position where the internal reflecting section of an IRI laser must be installed. CONSTITUTION:An SiO2 insulating film is shaped onto an n-InP substrate 1, an opening is formed at a location where an internal reflecting section must be shaped, and a pattern for a secondary diffraction grating at pitches of approximately 3700Angstrom is formed onto a resist through a two luminous-flux interference exposure method using an He-Cd laser. The secondary diffraction grating is shaped through etching by a bromine group mixed acid after post-baking, and the resist and the SiO2 insulating film are removed, thus forming the secondary diffraction grating in the internal reflecting section 2. An N-InGaAsP waveguide layer 3, an InGaAsP active layer 4 and an InGaAsP buffer layer 5 are grown successively onto the substrate 1 by first growth, a stripe composed of a resist is left on the layer 5 through photolithography, and a first growth layer is etched while employing said resist as a mask. A p-InP layer 6, an n-InP layer 7, a p-InP layer 8 and a p-InGaAs cap layer 9 are grown by second growth. |
| 公开日期 | 1990-01-31 |
| 申请日期 | 1988-07-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88848]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TSURUTA TORU. Semiconductor laser. JP1990028986A. 1990-01-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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