Method of making surface emission type semiconductor laser
文献类型：专利
| 作者 | MORI, KATSUMI; ASAKA, TATSUYA; IWANO, HIDEAKI |
| 发表日期 | 1994-10-18 |
| 专利号 | US5356832 |
| 著作权人 | SEIKO EPSON CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Method of making surface emission type semiconductor laser |
| 英文摘要 | A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like semiconductor layer extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the at least one column-like semiconductor layer. If a plurality of column-like semiconductor layers are to be formed by a separation groove, these column-like semiconductor layers are separated from one another, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove. |
| 公开日期 | 1994-10-18 |
| 申请日期 | 1992-12-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88868]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORPORATION |
| 推荐引用方式 GB/T 7714 | MORI, KATSUMI,ASAKA, TATSUYA,IWANO, HIDEAKI. Method of making surface emission type semiconductor laser. US5356832. 1994-10-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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