Semiconductor laser
文献类型：专利
| 作者 | CAPASSO, FEDERICO; CHO, ALFRED YI; FAIST, JEROME; HUTCHINSON, ALBERT LEE; SIRTORI, CARLO; SIVCO, DEBORAH LEE |
| 发表日期 | 2000-03-01 |
| 专利号 | EP0757418B1 |
| 著作权人 | AT&T IPM CORP. |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | The disclosed unipolar quantum cascade (QC) laser comprises a multiplicity of essentially identical active regions, with adjacent active regions separated by a superlattice carrier injection/relaxation region (11). A given active region (10) contains a single quantum well (13) with at least two electron states. Lasing is obtained without global intersubband population inversion. Instead, there is believed to exist local population inversion in a small region of k-space near k=0, corresponding to electron energies approximately within an optical phonon energy (∼35meV) from the bottom of the lower subband. A design feature that can be used to improve the thermal characteristics of substantially any QC laser is also disclosed. |
| 公开日期 | 2000-03-01 |
| 申请日期 | 1996-07-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88869]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT&T IPM CORP. |
| 推荐引用方式 GB/T 7714 | CAPASSO, FEDERICO,CHO, ALFRED YI,FAIST, JEROME,et al. Semiconductor laser. EP0757418B1. 2000-03-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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