High power semiconductor lasers with ridge waveguide structure
文献类型：专利
| 作者 | LEE, JUNG KEE; PARK, KYUNG HYUN; JANG, DONG HOON; PARK, CHUL SOON |
| 发表日期 | 2001-09-13 |
| 专利号 | US20010021213A1 |
| 著作权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | High power semiconductor lasers with ridge waveguide structure |
| 英文摘要 | A 0.98 mum semiconductor laser of a ridge waveguide (RWG) structure includes: to be lengthen the durability of a semiconductor laser by increasing a catastrophic optical damage (COD) level, a ridge having a fixed width and length so that the strip may stop in the position of 30 mum on the basic of end portion of an output facet along length direction of a resonator; and a non-waveguide region in the end portion of both sides of a resonator. |
| 公开日期 | 2001-09-13 |
| 申请日期 | 2001-04-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88878]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
| 推荐引用方式 GB/T 7714 | LEE, JUNG KEE,PARK, KYUNG HYUN,JANG, DONG HOON,et al. High power semiconductor lasers with ridge waveguide structure. US20010021213A1. 2001-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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