Semiconductor laser
文献类型：专利
| 作者 | OKURA YUJI |
| 发表日期 | 1988-12-09 |
| 专利号 | JP1988302585A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which can effectively enclose a current in an active layer, generate a laser oscillation with a less current and efficiently convert the current into a light by disposing the inner end of a third region which forms a current narrowing layer under an active region. CONSTITUTION:A first conductivity type first region 3, an active region 2 of a predetermined width for forming a junction with the region 2, a second conductivity type second region 1 for forming a junction with the region 2, a second conductivity type third region 4 in contact with the end of the region 2, and a fourth region 5 for forming a p-n junction with the region 4 are provided. A current narrowing layer is formed of the regions 3, 4, 5, and the inner end of the region 4 for forming the current narrowing layer is disposed under the region 2. For example, the region 3 is of a P-type InP clad layer, the region 2 is of an InGaAsP active layer 2, the region 1 is of an n-type InP clad layer, the region 4 is of an n-type InP current narrowing layer 4, and the region 5 is of a P-type InP current narrowing layer. |
| 公开日期 | 1988-12-09 |
| 申请日期 | 1987-06-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88879]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OKURA YUJI. Semiconductor laser. JP1988302585A. 1988-12-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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