Semiconductor laser device
文献类型：专利
| 作者 | IRIKAWA, MICHINORI, THE FURUKAWA ELECTRIC CO., LTD; IWASE, MASAYUKI, THE FURUKAWA ELECTRIC CO. LTD., |
| 发表日期 | 1998-05-27 |
| 专利号 | EP0493125B1 |
| 著作权人 | THE FURUKAWA ELECTRIC CO., LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device according to the invention comprises a semiconductor substrate (11), a multilayered double heterostructure having an active layer (14) and formed on said substrate (11) and a ridge waveguide further comprises a current blocking layer (12) formed between the semiconductor substrate (11) and the active layer (14). With such an arrangement, electric current is narrowed not only on the side of the ridge of the active layer (14) but also on the substrate side of the active layer to improve its current confinement effect. When the two lateral trenches of the ridge are embedded with resin layers (19), the ridge strip width can be made narrow to improve the heat conductance capability of the device. When the active layer (14) is realized in two discrete layers and a DCC structure having an intermediary clad layer is sandwiched therebetween, the device will show a low threshold current level, a minimum ϑ¦/ϑ ratio and stabilized thermal characteristics. |
| 公开日期 | 1998-05-27 |
| 申请日期 | 1991-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88880]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE FURUKAWA ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | IRIKAWA, MICHINORI, THE FURUKAWA ELECTRIC CO., LTD,IWASE, MASAYUKI, THE FURUKAWA ELECTRIC CO. LTD.,. Semiconductor laser device. EP0493125B1. 1998-05-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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