Hetero-junction type semiconductor laser
文献类型：专利
| 作者 | YAMAMOTO MOTOYUKI; OBA YASUO; MUTO YUHEI |
| 发表日期 | 1987-01-07 |
| 专利号 | JP1987001290A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Hetero-junction type semiconductor laser |
| 英文摘要 | PURPOSE:To improve the uniformity and reproducibility of laser characteristics by laminating two layers or more of compound semiconductors having different forbidden band width between a clad layer and a first coating layer and diffusing a P-type impurity up to the clad layer while penetrating layers in a striped section. CONSTITUTION:The title semiconductor laser has an N-GaAs substrate 102, an N-Ga0.65Al0.35As clad layer 103, a Ga0.92Al0.08As active layer 104, a P-Ga0.65 Al0.35Asclad layer 105, an N-GaAs current stopping layer 106, a P-Ga0.7Al0.3As first coating layer 107, a P-Ga0.65Al0.35As second coating layer 108, a P-GaAs contact layer 109, metallic current layers 101, 112, a layer 110 in which two layers of GaAs and Ga0.4Al0.6As having different forbidden band width are each grown repeatedly, a stripe 111, and a region 113, a composition of which is brought between GaAs and Ga0.3Al0.7As through the diffusion of a P-type impurity. When the P-Ga0.7Al0.3As first coating layer 107, the P-Ga0.65Al0.35As second coating layer 108 and the P-GaAs coating layer are grown, Zn is diffused until it reaches the P-clad layer 105 of F when diethylzinc is used as a P-dopant. |
| 公开日期 | 1987-01-07 |
| 申请日期 | 1985-06-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88882]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | YAMAMOTO MOTOYUKI,OBA YASUO,MUTO YUHEI. Hetero-junction type semiconductor laser. JP1987001290A. 1987-01-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。