LASERDIODE MIT VERGRABENER DOPPELHETEROSTRUKTUR UND SEITLICHER STROMBEGRENZUNG UND VERFAHREN ZU IHRER HERSTELLUNG
文献类型：专利
| 作者 | THULKE, WOLFGANG, DR., 8000 MUENCHEN, DE |
| 发表日期 | 1990-08-16 |
| 专利号 | DE4004749A1 |
| 著作权人 | SIEMENS AG |
| 国家 | 德国 |
| 文献子类 | 发明申请 |
| 其他题名 | LASERDIODE MIT VERGRABENER DOPPELHETEROSTRUKTUR UND SEITLICHER STROMBEGRENZUNG UND VERFAHREN ZU IHRER HERSTELLUNG |
| 英文摘要 | The laser diode has a substrate (1) of an 'n' conducting type, e.g. InP, that supports a cover layer (2) that is also 'n' conducting impregnated. An active layer (3) is then formed that has strips (31, 32). A second cover layer (4) has corresponding regions (41, 42) and is of a 'p' type conducting material. A blocking layer (5) of 'n' conducting material, such as In.Ga.As.P is formed and etched to create a strip region (50) that is projected vertically above the active region (31) and is symmetrical. The unit is completed by a cover layer (6), oxide layer (10) and metal contact surface (7). ADVANTAGE - Used for high power applications.The laser diode has a substrate (1) of an 'n' conducting type, e.g. InP, that supports a cover layer (2) that is also 'n' conducting impregnated. An active layer (3) is then formed that has strips (31, 32). A second cover layer (4) has corresponding regions (41, 42) and is of a 'p' type conducting material. A blocking layer (5) of 'n' conducting material, such as In.Ga.As.P is formed and etched to create a strip region (50) that is projected vertically above the active region (31) and is symmetrical. The unit is completed by a cover layer (6), oxide layer (10) and metal contact surface (7). |
| 公开日期 | 1990-08-16 |
| 申请日期 | 1990-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88883]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SIEMENS AG |
| 推荐引用方式 GB/T 7714 | THULKE, WOLFGANG, DR., 8000 MUENCHEN, DE. LASERDIODE MIT VERGRABENER DOPPELHETEROSTRUKTUR UND SEITLICHER STROMBEGRENZUNG UND VERFAHREN ZU IHRER HERSTELLUNG. DE4004749A1. 1990-08-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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