High output power semiconductor laser device
文献类型：专利
| 作者 | NAKAJIMA HISAO; KOBAYASHI KEISUKE; WATANABE NOZOMI; YAMASHITA MASATO; FUKUZAWA TADASHI |
| 发表日期 | 1983-12-27 |
| 专利号 | JP1983225677A |
| 著作权人 | KOGYO GIJUTSUIN (JAPAN) |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | High output power semiconductor laser device |
| 英文摘要 | PURPOSE:To enable to oscillate at high output power by a method wherein a region of average composition of two active layer semiconductors is provided on the reflacting surface (cleavage plane) located at both ends of a waveguide having an active layer composed of three superposed layers of chemical semiconductors having different compositions with each other. CONSTITUTION:An N type Ga0.7Al0.3As clad layer 3 is epitaxially grown on an N type GaAs substrate 4, an active layer 1 is formed by alternately laminating Ga0.6Al0.4As and GaAs are in three or more layers, and a P type Ga0.7Al0.3As layer 2 is clad on the above. Zn is diffused at 800 deg.C by performing a closed pipe method using an SiO2 mask in such a manner that the Zn reaches the cross section of the active layer 1 and layers 2 and 3. Then, said mask is removed, an SiO2 film 6 is newly provided, a rectangular window is provided at a right angle to a Zn diffusion region 5, and alloy films 7 and 8 are attached. Lastly, a reflecting surface is provided by cleaving the region 5, the above is cut into the prescribed width, and the device is completed. According to this constitution, the forbidden band width of the region 5 is made wider, light absorption is reduced, and the temperature rise on the cleavage plane is controlled, thereby enabling to increases output as well as to prolong the life of the titled laser device. |
| 公开日期 | 1983-12-27 |
| 申请日期 | 1982-06-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88885]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN (JAPAN) |
| 推荐引用方式 GB/T 7714 | NAKAJIMA HISAO,KOBAYASHI KEISUKE,WATANABE NOZOMI,et al. High output power semiconductor laser device. JP1983225677A. 1983-12-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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