Rib waveguide type semiconductor laser
文献类型：专利
| 作者 | YAMAMOTO, MOTOYUKI INTELLECTUAL PROPERTY DIVISION |
| 发表日期 | 1990-09-05 |
| 专利号 | EP0353033A3 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Rib waveguide type semiconductor laser |
| 英文摘要 | A rib waveguide type semiconductor laser includes a p-type high impurity concentration layer (5) formed between a p-upper cladding layer (4) and p-ohmic layer (6) and having an impurity concentration higher than the impurity concentration of the p-upper cladding layer (4) and p-ohmic layer (6). The high impurity concentration layer (5) acts to make small a discontinuous portion of the valence band between the p-upper cladding layer (4) and p-ohmic layer (6) and change the steep junction to a smoothly inclined junction, thereby lowering the voltage drop across the junction. |
| 公开日期 | 1990-09-05 |
| 申请日期 | 1989-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88886]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | YAMAMOTO, MOTOYUKI INTELLECTUAL PROPERTY DIVISION. Rib waveguide type semiconductor laser. EP0353033A3. 1990-09-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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