A semiconductor laser device
文献类型：专利
| 作者 | TAKIGUCHI HARUHISA; KUDO, HIROAKI; SAKANE, CHITOSE; SUGAHARA, SATOSHI |
| 发表日期 | 1994-06-01 |
| 专利号 | EP0368578B1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | A semiconductor laser device |
| 英文摘要 | A semiconductor laser device is disclosed which comprises an active layer (3) positioned between a first cladding layer (2) and a second cladding layer (5), the active layer (3) being made of a compound semiconductor material selected from the group consisting of (AlxGa1-x)0.5In0.5P (0≦x≦0.7), AlxGa1-xAs (0≦x≦0.4), and GaxIn1-xP1-yAsy (0.5≦x≦1, 0≦y≦1, and y=2x-1), wherein an optical guiding layer (4) having a diffraction grating made of (AlxGa1-x)0.5In0.5P (0≦x≦1) is positioned between the active layer (3) and one of the cladding layers (2, 5). |
| 公开日期 | 1994-06-01 |
| 申请日期 | 1989-11-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88891]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TAKIGUCHI HARUHISA,KUDO, HIROAKI,SAKANE, CHITOSE,et al. A semiconductor laser device. EP0368578B1. 1994-06-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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