Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | ISHINO MASATO; FUJIWARA KIYOSHI |
| 发表日期 | 1992-02-04 |
| 专利号 | JP1992033387A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To narrow the width of an active layer under satisfactory controllability, and to suppress a decrease in the yield due to step cut in the case of a buried epitaxial layer, a buried leakage, etc., due to narrowing by forming the outside of a double channel in a forward mesa and an inside, i.e., a mesa stripe to become a light emitting unit vertically or in a reverse mesa shape. CONSTITUTION:A mesa stripe 9 including an active layer 3 and double channels 100 at both sides of the stripe are formed by etching to a part underneath the layer 3 with mixture solution of HCI:H2O2:CH3COOH. Here, an SiN film 21 to become a mask is deposited directly on a P-type InP clad 4 at the stripe 9 disposed at the center of the channel 100, while an SiN film mask 21 exists on a P-type InGaAsP cap layer 20 outside the double channel. Here, the close contact of an InP/SiN with etchant of (chloric acid + hydrogen peroxide) is excellent, side etching is small, and the stripe 9 at the center becomes a reverse mesa shape, but since a region formed through the region 20 has a higher etching speed of InGaAsP than that of InP, the side surface outside the channel becomes a forward taper. |
| 公开日期 | 1992-02-04 |
| 申请日期 | 1990-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88895]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ISHINO MASATO,FUJIWARA KIYOSHI. Semiconductor laser and manufacture thereof. JP1992033387A. 1992-02-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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