Semiconductor laser and method for fabricating the same
文献类型：专利
| 作者 | ISHIBASHI, AKIHIKO; KIDOGUCHI, ISAO; OHNAKA, KIYOSHI; MANNOU, MASAYA |
| 发表日期 | 1996-10-01 |
| 专利号 | US5561080 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and method for fabricating the same |
| 英文摘要 | A semiconductor laser of the invention includes a (100) GaAs substrate having at least one stripe groove formed on an upper face thereof, and a semiconductor multilayer structure formed on the substrate. The stripe groove extends along a direction. The semiconductor multilayer structure includes an AlxGa1-x As layer (01), the portion being positioned on the stripe groove, a pair of AlGaInP cladding layers provided on the AlxGa1-xAs layer (0 |
| 公开日期 | 1996-10-01 |
| 申请日期 | 1995-03-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88900]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | ISHIBASHI, AKIHIKO,KIDOGUCHI, ISAO,OHNAKA, KIYOSHI,et al. Semiconductor laser and method for fabricating the same. US5561080. 1996-10-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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