半導体レーザ素子
文献类型：专利
| 作者 | 櫛部 光弘 |
| 发表日期 | 1998-03-27 |
| 专利号 | JP2763102B2 |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子 |
| 英文摘要 | PURPOSE:To prevent overflow of electrons and holes injected into an active layer and to enable injected current to be converted efficiently, by forming two clad layers of different compound semiconductors. CONSTITUTION:On an N-type (100) InP substrate 1, there are formed an N-type clad layer 2 of InP doped with Se, an undoped InGaAsP active layer 3, a P-type clad layer 4 of InAlAs doped with Zn and an undoped InGaAs cap layer sequentially in that order. An SiO2 CVD film is then deposited and etched to provide an SiO2 stripe. Using the SiO2 stripe as a mask, the InGaAs cap layer, the P-type InAlAs clad layer 4 and the InGaAsP active layer 3 are etched off and the N-type InP clad layer 2 is removed partially by 5mum. Then, a semi- insulating buried layer 5 of InP doped with Fe is formed and the SiO2 mask is removed. A P-type contact layer 6 of InGaAs doped with Zn is formed and an N ohmic electrode 7 and a P ohmic electrode 8 are formed. |
| 公开日期 | 1998-06-11 |
| 申请日期 | 1988-02-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88901]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | 櫛部 光弘. 半導体レーザ素子. JP2763102B2. 1998-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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