Semiconductor laser and a method for producing the same
文献类型：专利
| 作者 | KIDOGUCHI, ISAO; KAMIYAMA, SATOSHI; OHNAKA, KIYOSHI |
| 发表日期 | 1995-01-17 |
| 专利号 | US5383214 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser and a method for producing the same |
| 英文摘要 | A semiconductor laser including a semiconductor substrate and a multilayer structure formed upon the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers between which the active layer is interposed, and a current confinement layer for injecting a current into a stripe-shaped predetermined region of the active layer. The current confinement layer comprises a first current blocking layer formed in regions thereof excluding a region corresponding to the predetermined region of the active layer. The first current blocking layer has a refractive index higher than a refractive index of the pair of cladding layers and an energy band gap larger than an energy band gap of the active layer. |
| 公开日期 | 1995-01-17 |
| 申请日期 | 1993-07-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88906]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | KIDOGUCHI, ISAO,KAMIYAMA, SATOSHI,OHNAKA, KIYOSHI. Semiconductor laser and a method for producing the same. US5383214. 1995-01-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。