Semiconductor laser
文献类型：专利
| 作者 | SHINOHARA KOUJI; NISHIJIMA YOSHITO; FUKUDA HIROKAZU; YAMAMOTO KOUSAKU |
| 发表日期 | 1985-04-17 |
| 专利号 | JP1985066887A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain the high quality and the good reproducibility of an infrared ray semiconductor laser and to enable low current action by a method wherein the multilayer epitaxial growth of a crystal layer and the formation of an impurity region by diffusion are carried out. CONSTITUTION:The titled device is equipped with a PbSnTe active layer 2 and a PbTe clad layer 3 grown on a PbTe crystal substrate 1 of one conductivity type, an insulation film 4 selectively formed on this layer 3, the impurity region 5 of the reverse conductivity type formed by introduction of a reverse conductivity type impurity with this film 4 as a mask, p-n junctions formed from inside the substrate 1 to the layers 2 and 3 by the presence of this region 5, the impurity region 6 of one conductivity type formed by shallow introduction of one conductivity type impurity, and a part 5A reaching the surface by penetration in band form through the layers 2 and 3 by the presence of this region 6. As a result, the infrared ray semiconductor laser of PbTe/PbSnTe series can be obtained. |
| 公开日期 | 1985-04-17 |
| 申请日期 | 1983-09-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88911]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | SHINOHARA KOUJI,NISHIJIMA YOSHITO,FUKUDA HIROKAZU,et al. Semiconductor laser. JP1985066887A. 1985-04-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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