Distributed reflection semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | TAKAHASHI MITSUO; NISHIZAWA HIDEAKI |
| 发表日期 | 1989-07-10 |
| 专利号 | JP1989173774A |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed reflection semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To form a distributed reflection semiconductor laser for contriving a reduction in the oscillation threshold current of a semiconductor laser and the high luminous efficiency and the high output oscillation of the laser by a method wherein the end faces of a protective layer are made to protrude more in the lateral direction than the end faces of an active waveguide layer within the extent of a prescribed distance. CONSTITUTION:A GaInAsP active waveguide layer 3, a GaInAsP antimeltback AMB layer 5 and an n-type InP protective layer 4 are epitaxially grown in order on an InP buffer layer 2 on an InP substrate Then, when parts in the lateral direction of the layers 3, 5 and 4 are removed by etching, overhang parts X are formed on the end faces of the layer 4 using a selective etching method. According to a Kossel model, a growth rate in a lateral direction is larger by one digit compared to a growth rate in a thickness direction in a normal epitaxial growth and in a distributed reflection DBR type semiconductor laser of a waveguide structure BIG, a distance l0 between the end face U of the layer 4 and the start of a diffraction grating is set in 0.2-0mum. Thereby, the diffraction grating is formed within an extent, wherein its growth to the lateral direction is generating, and a break of an external waveguide layer 7 on the boundaries between external waveguide regions 14 and an active waveguide region 15 is eliminated. |
| 公开日期 | 1989-07-10 |
| 申请日期 | 1987-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88914]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES |
| 推荐引用方式 GB/T 7714 | TAKAHASHI MITSUO,NISHIZAWA HIDEAKI. Distributed reflection semiconductor laser and manufacture thereof. JP1989173774A. 1989-07-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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