Semiconductor etching method
文献类型：专利
| 作者 | OKAZAKI JIRO |
| 发表日期 | 1986-06-11 |
| 专利号 | JP1986123145A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor etching method |
| 英文摘要 | PURPOSE:To monitor the thickness of respective layers by immersing the junction area of p type In-P semiconductor in different impurity concentration into the sulfuric acid solution of In and making obvious the section of the junction area in accordance with difference of etching rate. CONSTITUTION:In a p type In-P semiconductor in different impurity concentration, a cleavage is formed at the position being apart by about 2mm from the end of the Cd of 20mg/In1g, and the layer 3 of 50mg/In1g as the semiconductor where the p type InP layer 2 and pInP layer 3 are sequentially formed by the epitaxial growth method on the InP substrate It is then immersed for 20sec into the solution obtained by dissolving In of 100mg or more to the sulfuric acid of 5cc and thereafter it is washed by water. Thus, level difference is generated at the layers 2, 3 and the interface of p-p'junction area can be obviously observed. Moreover, the n-InP layer 5, InGaAsP layer 6 as an active layer, p-InP layer 7, p-InP layer 8 are sequentially formed by the epitaxial growth method on the half-insulated InP substrate 4 and thereby thickness of layer 7 can be monitored even when the layer 7 of the laser providing the electrodes 9, 10 grows continuously up to the monitor layer. |
| 公开日期 | 1986-06-11 |
| 申请日期 | 1984-11-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88915]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | OKAZAKI JIRO. Semiconductor etching method. JP1986123145A. 1986-06-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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