Semiconductor laser device
文献类型：专利
| 作者 | SUGAWARA HIDETO; OBA YASUO |
| 发表日期 | 1989-07-24 |
| 专利号 | JP1989184972A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To decrease the effect of a barrier generated at an interface so as to decrease on operating voltage by a method wherein a super lattice layer and an intermediate band gap layer are provided between a clad layer large in a band gap and a contact layer small in a band gap. CONSTITUTION:A super lattice layer 16 provided with the same structured layer as a P-clad layer 15 and a P-intermediate band gap layer 17 are provided between the P-clad layer 15 and a P-GaAs electrode contact layer 18. The carrier concentration of the super lattice layer 16 and the intermediate band gap layer 17 are made higher than that of the P-clad layer 15. A P-super lattice layer and an intermediate band gap layer are formed as mentioned above, wherefore the height of the barrier at each interface can be decreased. And, as the P-electrode contact layer 18 can be doped in high concentration, the barrier can be decreased in height. By these processes, a semiconductor laser element low in an operating voltage and excellent in reliability can be obtained even if the element is a DH laser which has a large band gap difference between a clad layer and an electrode contact layer. |
| 公开日期 | 1989-07-24 |
| 申请日期 | 1988-01-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88916]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | SUGAWARA HIDETO,OBA YASUO. Semiconductor laser device. JP1989184972A. 1989-07-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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