Manufacture of semiconductor laser
文献类型：专利
| 作者 | MATSUDA MANABU |
| 发表日期 | 1991-08-13 |
| 专利号 | JP1991185781A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which is able to oscillate in wavelengths very close to each other by a method wherein phase shift type diffraction gratings all the same in period but all different in phase shift are arranged on a semiconductor substrate in a direction vertical to the direction on a waveguide. CONSTITUTION:A transparent phase shift mask 1, in which a part of its surface is flat and the other part adjacent to the flat part is formed into steps 1a-1d, is used to form phase shift type diffraction gratings, which are all the same in period but all different in phase shift, on a semiconductor substrate 2. Using the phase shift mask 1 formed as above, a substrate diffraction grating pattern 4 is formed on the semiconductor substrate 2, then a guide layer, an active layer, a clad layer, and a cap layer are laminated through the same process that a conventional semiconductor laser is formed, and thus a semiconductor laser is formed for each phase shift. By this setup, a semiconductor laser array composed of semiconductor lasers equal to phase shifts in number can be realized. |
| 公开日期 | 1991-08-13 |
| 申请日期 | 1989-12-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88919]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | MATSUDA MANABU. Manufacture of semiconductor laser. JP1991185781A. 1991-08-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。