Surface emitting type semiconductor laser
文献类型：专利
| 作者 | HAMAO NOBORU |
| 发表日期 | 1991-10-24 |
| 专利号 | JP1991239386A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface emitting type semiconductor laser |
| 英文摘要 | PURPOSE:To facilitate carrier injection, reduce series resistance of components and improve the characteristics of said components by providing at least a semiconductor multilayer reflection film in which a forbidden band width of each semiconductor layer which forms the semiconductor multilayer reflection film is larger than that of a semiconductor layer which forms an active layer and the forbidden band width of the semiconductor layers vary continuously. CONSTITUTION:This layer device comprises an N-type semiconductor substrate 1, an N-type semiconductor multilayer reflection film 4 where semiconductor layers with a high refractive index and semiconductors with a low refractive index are alternately laminated, an N-type clad layer 5, a P-type semiconductor multilayer reflection film 10 where semiconductors with a low refractive index and semiconductor layers with a high refraction factor are alternately laminated, a cap layer 11, a P-type electrode 12, and an N-type electrode 13 on the rear of the substrate. A forbidden band width of each semiconductor layer which forms the semiconductor multilayer reflection films 4 and 10, is larger than the forbidden band width of the semiconductor layer which forms the active layer 6. Particularly, the forbidden band width of at least one semiconductor layer varies continuously, thereby reducing the energy of hetero-barrier. This construction makes it possible to facilitate carrier injection, reduce series resistance of components, and improve the characteristics of the components. |
| 公开日期 | 1991-10-24 |
| 申请日期 | 1990-02-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88922]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | HAMAO NOBORU. Surface emitting type semiconductor laser. JP1991239386A. 1991-10-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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